Reconfigurable CMOS with undoped silicon nanowire midgap Schottky-barrier FETs

In this paper we report on a newly developed multi-gate nanowire-field-effect device (NWFET) in which the transistor type (i.e. PMOS and NMOS) is freely selectable by the application of a control-voltage. This significantly adds to flexibility in design of integrated circuits and their fabrication, respectively. We will show, that the use of midgap Schottky-barrier source and drain contacts are the key enabler for this device concept to be functional. A fully functional freely configurable CMOS-NWFET inverter circuit is presented, demonstrating the capability of this SOI technology platform. All this makes the presented NWFET-technology suitable for the fabrication multi-purpose devices for many applications. HighlightsÂ? Virtually dopant-free CMOS multi-gate silicon-nanowire FET SOI technology. Â? Midgap Schottky-barrier source/drain enabling carrier tunneling. Â? Use of Schottky-barriers provides low source/drain leakage. Â? Asymmetric workfunction metal not suitable for NWFET technology. Â? Voltage selectable NWFET types add to flexibility in circuit design.