Reconfigurable CMOS with undoped silicon nanowire midgap Schottky-barrier FETs
暂无分享,去创建一个
[1] Udo Schwalke,et al. CMOS without doping: Midgap Schottky-barrier nanowire field-effect-transistors for high-temperature applications , 2011, 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).
[2] Jason C. S. Woo,et al. Nickel Silicide Work Function Tuning Study In Metal-Gate CMOS Applications , 2004 .
[3] C. Hu,et al. Complementary silicide source/drain thin-body MOSFETs for the 20 nm gate length regime , 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).
[4] Udo Schwalke,et al. Novel Application of Wafer-Bonded MultiSOI: Junctionless Nanowire Transistors for CMOS Logic , 2010 .
[5] H. Riel,et al. Toward Nanowire Electronics , 2008, IEEE Transactions on Electron Devices.
[6] Eric M. Vogel,et al. Silicon nanowires as enhancement-mode Schottky barrier field-effect transistors , 2005 .
[7] J. Larson,et al. Overview and status of metal S/D Schottky-barrier MOSFET technology , 2006, IEEE Transactions on Electron Devices.
[8] Udo Schwalke,et al. Crystalline Gadolinium Oxide: A Promising High-k Candidate for Future CMOS Generations , 2010 .
[9] M. Ch. Lux-Steiner,et al. Work function and barrier heights of transition metal silicides , 1986 .
[10] H. Michaelson. The work function of the elements and its periodicity , 1977 .