Threshold voltage (<inline-formula> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula>) hysteresis affects the reliability of silicon carbide (SiC) MOSFETs. To evaluate the <inline-formula> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula> hysteresis effect on switching characteristics, this article first investigates the <inline-formula> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula> hysteresis in the static characteristics of three SiC MOSFETs with different gate structures. The results illustrate the density of the interface states in different gate structures. Then, the effect of <inline-formula> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula> hysteresis on dynamic characteristics under varying OFF-state starting voltages (<inline-formula> <tex-math notation="LaTeX">${V}_{\text {G}}^{ \mathrm{\scriptscriptstyle OFF}}$ </tex-math></inline-formula>) is evaluated by experiment. Furthermore, the effect mechanism of <inline-formula> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula> hysteresis and <inline-formula> <tex-math notation="LaTeX">${V}_{\text {G}}^{ \mathrm{\scriptscriptstyle OFF}}$ </tex-math></inline-formula> on switching characteristics is analyzed. Under the effect of the <inline-formula> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula> hysteresis, a smaller <inline-formula> <tex-math notation="LaTeX">${V}_{\text {G}}^{ \mathrm{\scriptscriptstyle OFF}}$ </tex-math></inline-formula> reduces <inline-formula> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula> when the device turns on. This phenomenon leads to a reduction in the turn-on delay and consequently lowers the turn-on loss. Therefore, the <inline-formula> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula> hysteresis is a significant factor for gate driver design of SiC MOSFETs.