Bias stress effects investigated in charge depletion and accumulation regimes for inkjet-printed perylene diimide organic transistors

Abstract In the present work, we investigated the bias stress (BS) effect taking place in inkjet-printed n-type N,N′-bis(n-octyl)-1,6-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI8-CN 2 ) transistors fabricated on SiO 2 gate dielectric. PDI8-CN 2 films were deposited from solvent systems able to improve the layer structural uniformity. These devices were found to exhibit largely negative threshold voltages ( V th ) and operate both as accumulation- and depletion-mode transistors. Hence, the BS phenomenon was analyzed by recording the I DS ( t ) time curves when the devices were driven under both negative and positive gate-source voltages ( V GS ). The BS measurements performed in this work confirm the conventional decay of the I DS ( t ) when positive V GS values (charge accumulation regime) are applied. On the other hand, I DS ( t ) increases very rapidly when the devices are polarized with negative V GS (charge depletion regime). The data achieved for the inkjet-printed devices were also compared with those measured under the same stressing conditions for a device fabricated by evaporating PDI8-CN 2 on the same SiO 2 substrate type. All the experimental observations reported in this work support the validity of a recently-proposed model, prompting for the occurrence of electrochemical reactions involving PDI8-CN 2 molecules and ambient agents (i.e. O 2 and H 2 O) as origin of the BS phenomenon in these n-type field-effect transistors.

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