论文信息 - Low-frequency noise and phase noise behavior of advanced SiGe HBTs

Low-frequency noise and phase noise behavior of advanced SiGe HBTs

This paper addresses low frequency noise and residual phase noise in advanced SiGe HBTs featuring different Ge profile shape. Under certain bias conditions, increasing the Ge content decreases the base current fluctuations and hence improves the residual phase noise performance. Additional low frequency noise and phase noise measurements have provided a better insight into the physical location of the 1/f noise sources in these devices.

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