论文信息 - X-ray structural characteristics of nc-Si obtained by thermal annealing of a-Si and SiO/sub x/ layers

X-ray structural characteristics of nc-Si obtained by thermal annealing of a-Si and SiO/sub x/ layers

Structural characteristics of nc-Si obtained by thermal annealing of a-Si and SiO/sub x/ layers are investigated by X-ray diffraction method. Standard silicon technology processes were used in order to obtain Si nanocrystallites embedded in a-Si or in SiO/sub 2/ layer. The nanocrystallite formation process was enhanced by the stress occurred in silicon oxides sandwich or in porous silicon structures.

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