Performance improvement of chemo-mechanical grinding in single crystal silicon machining by the assistance of elliptical ultrasonic vibration

As a promising technology for the machining of large-sized Si wafer, chemo-mechanical grinding (CMG) integrates the advantages of fixed abrasive machining and chemical mechanical polishing (CMP), and hence can generate superior surface quality comparable to that by CMP while maintaining the high geometric accuracy. In order to enhance the material removal rate (MRR), attain the work-surface with little damage or defects, and then promote the popularisation of CMG, a new combined grinding method, i.e., elliptical ultrasonic vibration assisted CMG (EUA-CMG), is proposed. Some analysis and experiments were conducted to reveal the processing characteristics of EUA-CMG of single crystal silicon. The result shows that compared with the conventional CMG without ultrasonic vibration, better surface quality and higher MRR can be attained in EUA-CMG.

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