Strained Si/Si1−yCy superlattice based quasi-read avalanche transit-time devices for terahertz ultrafast switches

[1]  W. Feng Oscillations up to terahertz frequency in resonant tunneling diodes , 2019, Microwave and Optical Technology Letters.

[2]  Safumi Suzuki,et al.  Resonant-tunneling-diode terahertz oscillator with a cylindrical cavity for high-frequency oscillation , 2019, AIP Advances.

[3]  Sulagna Chatterjee,et al.  Strain-Engineered Asymmetrical Superlattice Si/Si1–xGex Nano-ATT $\langle$ p++-n-n−-n++ $\rangle$ Oscillator: Enhanced Photo-Sensitivity in Terahertz Domain , 2019, IEEE Transactions on Electron Devices.

[4]  Joo-Hiuk Son,et al.  Potential clinical applications of terahertz radiation , 2019, Journal of Applied Physics.

[5]  M. Mukherjee,et al.  Cubic versus hexagonal SiC vertical pin SPST/SPDT/SPMT switches for MMW communication systems: a modified quantum drift-diffusion model for switching characteristics analysis , 2019, Microsystem Technologies.

[6]  Chen Xueping,et al.  The medical application of terahertz technology in non-invasive detection of cells and tissues: opportunities and challenges , 2019, RSC advances.

[7]  S. Chattopadhyay,et al.  Investigation of the performance of strain-engineered silicon nanowire field effect transistors (ɛ-Si-NWFET) on IOS substrates , 2019, Journal of Applied Physics.

[8]  M. Mukherjee,et al.  Design and characterization of asymetrical super-lattice Si/4H-SiC pin photo diode array: a potential opto-sensor for future applications in bio-medical domain , 2018, Microsystem Technologies.

[9]  M. Mukherjee,et al.  III–V super-lattice SPST/SPMT pin switches for THz communication: theoretical reliability and experimental feasibility studies , 2018, Microsystem Technologies.

[10]  S. Chattopadhyay,et al.  Fraction of Insertion of the Channel Fin as Performance Booster in Strain-Engineered p-FinFET Devices With Insulator-on-Silicon Substrate , 2018, IEEE Transactions on Electron Devices.

[11]  Tsuneyuki Ozaki,et al.  Intense terahertz radiation and their applications , 2016 .

[12]  Safumi Suzuki,et al.  Oscillation up to 1.92 THz in resonant tunneling diode by reduced conduction loss , 2016 .

[13]  S. Chattopadhyay,et al.  Estimation of step-by-step induced stress in a sequential process integration of nano-scale SOS MOSFETs with high-k gate dielectrics , 2013 .

[14]  M. Mukherjee,et al.  A 2D MODELLING OF THERMAL HEAT SINK FOR IMPATT AT HIGH POWER MMW FREQUENCY , 2013 .

[15]  Christophe Delerue,et al.  Effects of strain on the carrier mobility in silicon nanowires. , 2012, Nano letters.

[16]  I. Mehdi,et al.  Design and Characterization of a Room Temperature All-Solid-State Electronic Source Tunable From 2.48 to 2.75 THz , 2012, IEEE Transactions on Terahertz Science and Technology.

[17]  Yujie J. Ding,et al.  Power scalability and frequency agility of compact terahertz source based on frequency mixing from solid-state lasers , 2011 .

[18]  Yujie J. Ding,et al.  Compact and portable terahertz source by mixing two frequencies generated simultaneously by single solid-state laser , 2010, CLEO: 2011 - Laser Science to Photonic Applications.

[19]  M. Mukherjee,et al.  Optically Modulated III–V Nitride-Based Top-Mounted and Flip-Chip IMPATT Oscillators at Terahertz Regime: Studies on the Shift of Avalanche Transit Time Phase Delay Due to Photogenerated Carriers , 2009, IEEE Transactions on Electron Devices.

[20]  Decai Yu,et al.  First-principles study of electronic properties of biaxially strained silicon: Effects on charge carrier mobility , 2008 .

[21]  M. Mukherjee,et al.  Photosensitivity Analysis of Gallium Nitride and Silicon Carbide Terahertz IMPATT Oscillators: Comparison of Theoretical Reliability and Study on Experimental Feasibility , 2008, IEEE Transactions on Device and Materials Reliability.

[22]  Shu-Tong Chang,et al.  Theoretical study of electron mobility for silicon–carbon alloys , 2008 .

[23]  M. Mukherjee,et al.  GaN IMPATT diode: a photo-sensitive high power terahertz source , 2007 .

[24]  S. Thompson,et al.  Uniaxial-process-induced strained-Si: extending the CMOS roadmap , 2006, IEEE Transactions on Electron Devices.

[25]  Andrea L. Lacaita,et al.  Quantum-corrected drift-diffusion models for transport in semiconductor devices , 2005 .

[26]  M. Arai,et al.  Demonstration of High-Power X-Band Oscillation in p+/n-/n+ 4H-SiC IMPATT Diodes with Guard-Ring Termination , 2005 .

[27]  Y. Yeo,et al.  Enhanced performance in 50 nm N-MOSFETs with silicon-carbon source/drain regions , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

[28]  L. Freund,et al.  Thin Film Materials: Stress, Defect Formation and Surface Evolution , 2004 .

[29]  D. Greve Si–Ge–C growth and devices , 2001 .

[30]  Tadao Ishibashi,et al.  C.W. oscillation with p+-p-n+ silicon IMPATT diodes in 200 GHz and 300 GHz bands , 1976 .

[31]  S. Chattopadhyay,et al.  Analytical modeling of the lattice and thermo-elastic coefficient mismatch-induced stress into silicon nanowires horizontally embedded on insulator-on-silicon substrates , 2017 .

[32]  A. Alavi,et al.  Opportunities and Challenges , 1998, In Vitro Diagnostic Industry in China.

[33]  S. Moaveni Finite Element Analysis , 1999 .