Influence of Halo Implantations on the Total Ionizing Dose Response of 28-nm pMOSFETs Irradiated to Ultrahigh Doses

In this paper, the total ionizing dose (TID) response of a commercial 28-nm high-k CMOS technology at ultrahigh doses is measured and discussed. The degradation of pMOSFETs depends not only on the channel width but also on the channel length. Short-channel pMOSFETs exhibit a higher TID tolerance compared to long ones. We attributed this effect to the presence of the halo implantations. For short-channel lengths, the drain halo can overlap the source one, increasing the average bulk doping along the channel. The higher bulk doping attenuates the radiation-induced degradation, improving the TID tolerance of short-channel transistors. The results are finally compared and discussed through technology computer-aided design simulations.

[1]  peixiong zhao,et al.  Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses , 2018, IEEE Transactions on Nuclear Science.

[2]  Juin J. Liou,et al.  A review of recent MOSFET threshold voltage extraction methods , 2002, Microelectron. Reliab..

[3]  Alessandro Paccagnella,et al.  Drain Current Collapse in 65 nm pMOS Transistors After Exposure to Grad Dose , 2015, IEEE Transactions on Nuclear Science.

[4]  M. Gaillardin,et al.  Enhanced Radiation-Induced Narrow Channel Effects in Commercial ${\hbox {0.18}}~\mu$ m Bulk Technology , 2011, IEEE Transactions on Nuclear Science.

[5]  Federico Faccio,et al.  Influence of LDD Spacers and H+ Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses , 2018, IEEE Transactions on Nuclear Science.

[6]  D Contardo,et al.  CMS Phase II Upgrade Scope Document , 2015 .

[7]  Marc Gaillardin.  Enhanced Radiation-Induced Narrow Channel Effects in Commercial 0 . 18 m Bulk Technology , 2011 .

[8]  S. Gerardin,et al.  Enhancement of Transistor-to-Transistor Variability Due to Total Dose Effects in 65-nm MOSFETs , 2015, IEEE Transactions on Nuclear Science.

[9]  V. Ramgopal Rao,et al.  Optimization and realization of sub-100-nm channel length single halo p-MOSFETs , 2002 .

[10]  H. E. Boesch,et al.  Hole Removal in Thin-Gate MOSFETs by Tunneling , 1985, IEEE Transactions on Nuclear Science.

[11]  E. Cartier,et al.  (Invited) The Past, Present and Future of High-k/Metal Gates , 2013 .

[12]  Tetsuya Uchida,et al.  Reverse short-channel effect due to lateral diffusion of point-defect induced by source/drain ion implantation , 1994, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[13]  A. Czerwiński.  Defect-related local-electric-field impact on p–n junction parameters , 1999 .

[14]  Naoyuki Shigyo,et al.  A review of narrow-channel effects for STI MOSFET's: A difference between surface- and buried-channel cases , 1999 .

[15]  D. Bisello,et al.  X-ray radiation source for total dose radiation studies , 2004 .

[16]  John Sochacki,et al.  The sensitivity of radiation-induced leakage to STI topology and sidewall doping , 2011, Microelectron. Reliab..

[17]  Hs Hayward,et al.  ATLAS Phase-II Upgrade Scoping Document , 2015 .

[18]  H. Barnaby,et al.  Effects of Channel Implant Variation on Radiation-Induced Edge Leakage Currents in n-Channel MOSFETs , 2017, IEEE Transactions on Nuclear Science.

[19]  D. Bisello,et al.  Impact of 24-GeV proton irradiation on 0.13-μm CMOS devices , 2005, 2005 8th European Conference on Radiation and Its Effects on Components and Systems.

[20]  Andrea Baschirotto,et al.  Total ionizing dose effects on analog performance of 28 nm bulk MOSFETs , 2017, 2017 47th European Solid-State Device Research Conference (ESSDERC).

[21]  M. Turowski,et al.  Nonuniform total-dose-induced charge distribution in shallow-trench isolation oxides , 2004, IEEE Transactions on Nuclear Science.

[22]  H. Barnaby,et al.  Two-dimensional methodology for modeling radiation-induced off-state leakage in CMOS technologies , 2005, IEEE Transactions on Nuclear Science.

[23]  Andrea Baschirotto,et al.  Total Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad , 2017 .

[24]  Cor Claeys,et al.  Effects of Halo Doping and Si Capping Layer Thickness on Total-Dose Effects in Ge p-MOSFETs , 2009, IEEE Transactions on Nuclear Science.

[25]  A. Candelori,et al.  Impact of 24-GeV Proton Irradiation on 0.13-$mu$m CMOS Devices , 2005, IEEE Transactions on Nuclear Science.

[26]  J.A. Felix,et al.  Radiation Effects in MOS Oxides , 2008, IEEE Transactions on Nuclear Science.

[27]  R. Rios,et al.  A three-transistor threshold voltage model for halo processes , 2002, Digest. International Electron Devices Meeting,.

[28]  En Xia Zhang,et al.  Effect of Ionizing Radiation on Defects and $1/f$ Noise in Ge pMOSFETs , 2011, IEEE Transactions on Nuclear Science.

[29]  Bin Yu,et al.  Short-channel effect improved by lateral channel-engineering in deep-submicronmeter MOSFET's , 1997 .

[30]  N. Collaert,et al.  Limitations of shift-and-ratio based L/sub eff/ extraction techniques for MOS transistors with halo or pocket implants , 2000, IEEE Electron Device Letters.

[31]  S. Gerardin,et al.  Radiation-Induced Short Channel (RISCE) and Narrow Channel (RINCE) Effects in 65 and 130 nm MOSFETs , 2015, IEEE Transactions on Nuclear Science.