论文信息 - 100 GHz dynamic frequency divider in SiGe bipolar technology

100 GHz dynamic frequency divider in SiGe bipolar technology

A 100 GHz dynamic frequency divider and a 62 GHz static frequency divider are presented, both using a -3.8 V supply and designed in IBM's 0.12 /spl mu/m SiGe technology with f/sub T/ of 207 GHz and f/sub MAX/ of 285 GHz. Static divider performance is compared to three other static dividers designed in IBM's 0.18 /spl mu/m SiGe BiCMOS technology.

Gregory G. Freeman | Alexander V. Rylyakov | Basanth Jagannathan | L. Klapproth

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