High-finesse resonant-cavity photodetectors with an adjustable resonance frequency

High speeds, high external quantum efficiencies, narrow spectral linewidths, and convenience in coupling make resonant-cavity photodetectors (RECAP's) good candidates for telecommunication applications. In this paper, we present analytical expressions for the design of RECAP's with narrow spectral linewidths and high quantum efficiencies. We also present experimental results on a RECAP having an operating wavelength /spl lambda//sub 0//spl ap/1.3 /spl mu/m with a very narrow spectral response. The absorption takes place in a thin In/sub 0.53/Ga/sub 0.47/As layer placed in an InP cavity. The InP p-i-n structure was wafer bonded to a high-reflectivity GaAs/AlAs quarter-wavelength Bragg reflector. The top mirror consisted of three pairs of a ZnSe/CaF/sub 2/ quarter-wavelength stack (QWS). A spectral linewidth of 1.8 nm was obtained with an external quantum efficiency of 48%. We also demonstrate that the spectral response can be tailored by etching the top layer of the microcavity. The results are found to agree well with those obtained from analytical expressions derived on the assumption of linear-phase Bragg reflectors as well as detailed simulations performed using the transfer matrix method.

[1]  John E. Bowers,et al.  Modeling and performance of wafer-fused resonant-cavity enhanced photodetectors , 1995 .

[2]  Resonant-cavity-enhanced pin photodetector with 17 GHz bandwidth-efficiency product , 1994 .

[3]  U. Koren,et al.  High quantum efficiency and narrow absorption bandwidth of the wafer-fused resonant In/sub 0.53/Ga/sub 0.47/As photodetectors , 1994, IEEE Photonics Technology Letters.

[4]  Rajeev J Ram,et al.  Low threshold, wafer fused long wavelength vertical cavity lasers , 1994 .

[5]  G. Y. Robinson,et al.  108-GHz GaInAs/InP p-i-n photodiodes with integrated bias tees and matched resistors , 1993, IEEE Photonics Technology Letters.

[6]  Analysis of wafer fusing for 1.3 μm vertical cavity surface emitting lasers , 1993 .

[7]  Yoh Ogawa,et al.  Electrical characteristics of directly-bonded GaAs and InP , 1993 .

[8]  Katsumi Kishino,et al.  A theoretical study of resonant cavity‐enhanced photodectectors with Ge and Si active regions , 1992 .

[9]  Scott W. Corzine,et al.  Analytic expressions for the reflection delay, penetration depth, and absorptance of quarter-wave dielectric mirrors , 1992 .

[10]  Larry A. Coldren,et al.  A tanh substitution technique for the analysis of abrupt and graded interface multilayer dielectric stacks , 1991 .

[11]  J. Chyi,et al.  Resonant cavity-enhanced (RCE) photodetectors , 1991 .

[12]  D. Deppe,et al.  Low-voltage high-gain resonant-cavity avalanche photodiode , 1991, IEEE Photonics Technology Letters.

[13]  Albert Chin,et al.  Enhancement of quantum efficiency in thin photodiodes through absorptive resonance , 1991 .

[14]  D. E. Mull,et al.  Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integration , 1990 .

[15]  R. Dupuis,et al.  Planar InGaAs PIN photodetectors grown by metalorganic chemical vapour deposition , 1986 .

[16]  S. Adachi GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications , 1985 .

[17]  Sadao Adachi,et al.  Refractive indices of III–V compounds: Key properties of InGaAsP relevant to device design , 1982 .

[18]  Emil Wolf,et al.  Principles of Optics: Contents , 1999 .