High-finesse resonant-cavity photodetectors with an adjustable resonance frequency
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J. Bowers | R. Chelakara | M. R. Islam | R. Dupuis | J. Campbell | E. Hu | I. Tan | B. Streetman | K. Anselm | S. Murtaza
[1] John E. Bowers,et al. Modeling and performance of wafer-fused resonant-cavity enhanced photodetectors , 1995 .
[2] Resonant-cavity-enhanced pin photodetector with 17 GHz bandwidth-efficiency product , 1994 .
[3] U. Koren,et al. High quantum efficiency and narrow absorption bandwidth of the wafer-fused resonant In/sub 0.53/Ga/sub 0.47/As photodetectors , 1994, IEEE Photonics Technology Letters.
[4] Rajeev J Ram,et al. Low threshold, wafer fused long wavelength vertical cavity lasers , 1994 .
[5] G. Y. Robinson,et al. 108-GHz GaInAs/InP p-i-n photodiodes with integrated bias tees and matched resistors , 1993, IEEE Photonics Technology Letters.
[6] Analysis of wafer fusing for 1.3 μm vertical cavity surface emitting lasers , 1993 .
[7] Yoh Ogawa,et al. Electrical characteristics of directly-bonded GaAs and InP , 1993 .
[8] Katsumi Kishino,et al. A theoretical study of resonant cavity‐enhanced photodectectors with Ge and Si active regions , 1992 .
[9] Scott W. Corzine,et al. Analytic expressions for the reflection delay, penetration depth, and absorptance of quarter-wave dielectric mirrors , 1992 .
[10] Larry A. Coldren,et al. A tanh substitution technique for the analysis of abrupt and graded interface multilayer dielectric stacks , 1991 .
[11] J. Chyi,et al. Resonant cavity-enhanced (RCE) photodetectors , 1991 .
[12] D. Deppe,et al. Low-voltage high-gain resonant-cavity avalanche photodiode , 1991, IEEE Photonics Technology Letters.
[13] Albert Chin,et al. Enhancement of quantum efficiency in thin photodiodes through absorptive resonance , 1991 .
[14] D. E. Mull,et al. Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integration , 1990 .
[15] R. Dupuis,et al. Planar InGaAs PIN photodetectors grown by metalorganic chemical vapour deposition , 1986 .
[16] S. Adachi. GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications , 1985 .
[17] Sadao Adachi,et al. Refractive indices of III–V compounds: Key properties of InGaAsP relevant to device design , 1982 .
[18] Emil Wolf,et al. Principles of Optics: Contents , 1999 .