Dual-carrier multiplication high-gain MWIR strain layer superlattice impact ionization engineered avalanche photodiodes
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Elena Plis | Christoph H. Grein | Sanjay Krishna | Majeed M. Hayat | Siddhartha Ghosh | Qing Duan | Koushik Banerjee
[1] Elena Plis,et al. Ultralow noise midwave infrared InAs–GaSb strain layer superlattice avalanche photodiode , 2007 .
[2] X. Lei,et al. Impact ionization in balance equation theory , 1995 .
[3] Bahaa E. A. Saleh,et al. Effect of dead space on gain and noise double-carrier-multiplication avalanche photodiodes , 1992, Optical Society of America Annual Meeting.