论文信息 - Characterization of 880 V Normally Off GaN MOSHEMT on Silicon Substrate Fabricated With a Plasma-Free, Self-Terminated Gate Recess Process - 字舞流文

Characterization of 880 V Normally Off GaN MOSHEMT on Silicon Substrate Fabricated With a Plasma-Free, Self-Terminated Gate Recess Process

C. Wen | Wengang Wu | Maojun Wang | B. Xie | Jinyan Wang | Y. Hao | Bo Shen | K. Cheng | M. Tao | Shaofei Liu