A Model of Copper CMP
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Jian Zhang | F. Kaufman | E. Paul | Frank B. Kaufman | Ed Paul | Vlasta Brusic | Fred Sun | Robert Vacassy | R. Vacassy | Fred Sun | Jian Zhang | V. Brusic
[1] Gottlieb S. Oehrlein,et al. Surface Chemistry Studies of Copper Chemical Mechanical Planarization , 2001 .
[2] S. Seal,et al. Mechanism of Copper Removal during CMP in Acidic H 2 O 2 Slurry , 2004 .
[3] K. K. Mishra,et al. Solution chemical constraints in the chemical-mechanical polishing of copper: Aqueous stability diagrams for the Cu-H2O and Cu-NH3-H2O systems , 1996 .
[4] E. Paul,et al. Application of a CMP Model to Tungsten CMP , 2001 .
[5] D. J. Pearson,et al. Copper interconnection integration and reliability , 1995 .
[6] Sadasivan Shankar,et al. Three-dimensional wafer-scale copper chemical–mechanical planarization model , 2002 .
[7] E. Paul,et al. A Model of CMP III. Inhibitors , 2003 .
[8] D. J. Pearson,et al. Chemical‐Mechanical Polishing for Fabricating Patterned W Metal Features as Chip Interconnects , 1991 .
[9] J. Leja,et al. On the Potential/pH Diagrams of the Cu ‐ NH 3 ‐ H 2 O and Zn ‐ NH 3 ‐ H 2 O Systems , 1965 .
[10] R. Small,et al. Potential-pH Diagrams of Interest to Chemical Mechanical Planarization of Copper , 2002 .
[11] S. Babu,et al. Chemical Mechanical Polishing of Copper and Tantalum in Potassium Iodate-Based Slurries , 2001 .
[12] E. Paul,et al. A Model of Chemical Mechanical Polishing , 2001 .
[13] Ling Wang,et al. Effect of Hydrogen Peroxide on Oxidation of Copper in CMP Slurries Containing Glycine , 2003 .
[14] Ed Paul. A Model of Chemical Mechanical Polishing II. Polishing Pressure and Speed , 2002 .
[15] S. Ramarajan,et al. Modification of the Preston equation for the chemical-mechanical polishing of copper , 1998 .
[16] J. Steigerwald,et al. Mechanisms of copper removal during chemical mechanical polishing , 1995 .