Characterization and Modeling of an SiGe HBT Technology for Transceiver Applications in the 100–300-GHz Range

This paper describes a methodology for extracting and verifying the high-frequency model parameters of the HICUM L0 and L2 models of a silicon-germanium HBT from device and circuit measurements in the 110-325-GHz range. For the first time, the non-quasi-static effects, missing in the HICUM/L0 model, are found to be essential in accurately capturing the frequency dependence of the transistor maximum available power gain beyond the inflection frequency for unconditional stability. Furthermore, it is demonstrated that the optimal partitioning of the area and periphery components of the junction base-emitter, base-collector, and collector-substrate capacitances, and of the internal and external base and collector resistances can only be determined from S -parameter measurements beyond 200 GHz. The extracted models are validated on state-of-the-art linear and nonlinear circuits (amplifier, voltage-controlled oscillator (VCO), and VCO + divider chain) operating at frequencies as high as 240 GHz.

[1]  D.B.M. Klaassen,et al.  Improved extraction of base and emitter resistance from small signal high frequency admittance measurements , 1999, Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024).

[2]  M. Schroter,et al.  A computationally efficient physics-based compact bipolar transistor model for circuit Design-part I: model formulation , 2006, IEEE Transactions on Electron Devices.

[3]  J. L. Showell,et al.  A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design , 1997 .

[4]  T. Nakadai,et al.  Measuring the base resistance of bipolar transistors , 1991, Proceedings of the 1991 Bipolar Circuits and Technology Meeting.

[5]  Kevin W. Kobayashi,et al.  A novel HBT distributed amplifier design topology based on attenuation compensation techniques , 1994 .

[6]  E. Dacquay,et al.  -Band Total Power Radiometer Performance Optimization in an SiGe HBT Technology , 2012 .

[7]  A. Mangan,et al.  De-embedding transmission line measurements for accurate modeling of IC designs , 2006, IEEE Transactions on Electron Devices.

[8]  A. Konczykowska,et al.  A Novel Method for HBT Intrinsic Collector Resistance Extraction from S-Parameters , 2007, 2007 Asia-Pacific Microwave Conference.

[9]  Michael Schroter,et al.  Experimental determination of the internal base sheet resistance of bipolar transistors under forward-bias conditions , 1991 .

[10]  Kevin W. Kobayashi,et al.  A novel HBT distributed amplifier design topology based on attenuation compensation techniques , 1994, Proceedings of 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium.

[11]  P. Chevalier,et al.  $D$ -Band Total Power Radiometer Performance Optimization in an SiGe HBT Technology , 2012, IEEE Transactions on Microwave Theory and Techniques.

[12]  E. Dacquay,et al.  A study of SiGe signal sources in the 220–330 GHz range , 2012, 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

[13]  M. Schroter,et al.  The rectangular bipolar transistor tetrode structure and its application , 2007, 2007 IEEE International Conference on Microelectronic Test Structures.

[14]  I. Sarkas,et al.  A Fundamental Frequency 120-GHz SiGe BiCMOS Distance Sensor With Integrated Antenna , 2012, IEEE Transactions on Microwave Theory and Techniques.

[15]  V. Krozer,et al.  Coupled Transmission Lines as Impedance Transformer , 2007, IEEE Transactions on Microwave Theory and Techniques.

[16]  S. Voinigescu,et al.  Device and IC Characterization Above 100 GHz , 2012, IEEE Microwave Magazine.