Solvent Vapor‐Induced Nanowire Formation in Poly(3‐hexylthiophene) Thin Films

Summary: Nanowire lengths and length-to-width aspect ratios in regioregular poly(3-hexylthiophene) (P3HT) were simply controlled through changes in the solvent vapor pressure during solidification. It is demonstrated that the nanowires grew by rod-to-rod association, in which the molecular long axis of the P3HT chains appeared to be well-oriented parallel to the silicon substrate (Si/SiOx). The formation of the nanowires took place by one dimensional self-assembly, governed by π-π stacking of the P3HT units. TEM high contrast images showing P3HT nanowires fabricated by spin-coating under a solvent vapor pressure.

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