High temperature operation of 1.26 μm ridge waveguide laser with InGaAs metamorphic buffer on GaAs substrate

We have successfully developed a 1.26 mum ridge waveguide laser diode with an InGaAs metamorphic buffer on an GaAs substrate grown by metal-organic vapor-phase epitaxy. This laser has achieved the highest operating temperature (188degC) reported for a metamorphic laser.

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