ITEP MEVVA ion beam for rhenium silicide production.
暂无分享,去创建一个
N. Medetov | N. Gerasimenko | G. Kropachev | R. Kuibeda | S. Petrenko | D. Seleznev | T. Kulevoy | A. Kozlov | O. Zaporozhan | P. Yakushin
[1] P. Muret,et al. Electrical transport properties of semiconducting rhenium silicide thin films on silicon(111) , 2001 .
[2] T. Kulevoy,et al. Optimization of U4+ output of the MEVVA ion source , 1996 .
[3] M. Stutzmann,et al. Electronic properties of semiconducting FeSi2 films , 1990 .
[4] G. Y. Robinson,et al. Epitaxial films of semiconducting FeSi2 on (001) silicon , 1990 .
[5] Shyam P Murarka,et al. Silicides for VLSI Applications , 1983 .