High-gain InGaAsN materials

Beryllium was incorporated in InGaAsN single quantum well (SQW). Comparing with the conventional InGaAsN SQW structures, photoluminescence (PL) investigations show a significant improvement. After 3000 sec of annealing at 700 °C, the PL peak area is about 20 times higher while the wavelength keeps 25 nm longer. After 800 sec of this annealing, the PL quenched slowly for the conventional structures because of the strain relaxation, while the PL of the new structures increased rapidly and show no saturation after 3000 sec of annealing. Laser processing based on the new InGaAsN structures resulted in one half of the threshold current density compare to conventional InGaAsN.