论文信息 - Aluminum scandium nitride thin-film bulk acoustic resonators for wide band applications

Aluminum scandium nitride thin-film bulk acoustic resonators for wide band applications

Abstract Piezoelectric c-textured Al(1−x)ScxN thin films, where the Sc relative concentration, x, varies in the range 0–0.15 have been studied in view of radio frequency (RF) electro-acoustic applications. Thin film bulk acoustic wave resonators (FBARs) employing these films were fabricated and characterized as a function of the Sc concentration for the first time. The measured electromechanical coupling is found to increase by as much as 100% in the above concentration range. The results from this work underline the potential of the c-textured Al(1−x)ScxN based FBARs for wide band RF applications.

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