论文信息 - 0.12-μm gate III-V nitride HFET's with high contact resistances

0.12-μm gate III-V nitride HFET's with high contact resistances

HFET's with 0.12-/spl mu/m gate length were fabricated on a III-V nitride wafer. The contact resistance from unannealed Ti/Au ohmic contact was 10 /spl Omega//spl middot/mm. Even with this relatively high contact resistance, f/sub T/ of 46.9 GHz and f/sub max/ of 103 GHz were measured with the Ti/Au contacts, the highest yet achieved on III-V nitride FETs. The improvement in the frequency response was mainly due to the decrease in the gate length (0.12 /spl mu/m). In addition, the effects of high contact resistances at high frequency are discussed.

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