PSpice modeling platform for SiC power MOSFET modules with extensive experimental validation

The aim of this work is to present a PSpice implementation for a well-established and compact physics-based SiC MOSFET model, including a fast, experimental-based parameter extraction procedure in a MATLAB GUI environment. The model, originally meant for single-die devices, has been used to simulate the performance of high current rating (above 100 A), multi-chip SiC MOSFET modules both for static and switching behavior. Therefore, the simulation results have been validated experimentally in a wide range of operating conditions, including high temperatures, gate resistance and stray elements. The whole process has been repeated for three different modules with voltage rating of 1.2 kV and 1.7 kV, manufactured by three different companies. Lastly, a parallel connection of two modules of the same type has been performed in order to observe the unbalancing and mismatches experimentally, and to verify the model effectiveness in such challenging topologies.

[1]  Anant K. Agarwal,et al.  An overview of SiC power devices , 2010, 2010 International Conference on Power, Control and Embedded Systems.

[2]  J. Palmour.  Silicon carbide power device development for industrial markets , 2014, 2014 IEEE International Electron Devices Meeting.

[3]  Philippe Godignon,et al.  A Survey of Wide Bandgap Power Semiconductor Devices , 2014, IEEE Transactions on Power Electronics.

[4]  Xiongfei Wang,et al.  Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs , 2016, IEEE Transactions on Power Electronics.

[5]  Sei-Hyung Ryu,et al.  Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence , 2007, IEEE Transactions on Power Electronics.

[6]  T. Funaki,et al.  A static and dynamic model for a silicon carbide power MOSFET , 2009, 2009 13th European Conference on Power Electronics and Applications.

[7]  Stefanos Manias,et al.  An accurate Matlab/Simulink based SiC MOSFET model for power converter applications , 2015, 2015 IEEE Applied Power Electronics Conference and Exposition (APEC).

[8]  Hans-Peter Nee,et al.  Experimental investigations of static and transient current sharing of parallel-connected silicon carbide MOSFETs , 2013, 2013 15th European Conference on Power Electronics and Applications (EPE).

[9]  E. Santi,et al.  Power SiC MOSFET model with simplified description of linear and saturation operating regions , 2015, 2015 9th International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia).

[10]  Gangyao Wang,et al.  Dynamic and static behavior of packaged silicon carbide MOSFETs in paralleled applications , 2014, 2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014.

[11]  I. Budihardjo,et al.  The lumped-charge power MOSFET model, including parameter extraction , 1995 .

[12]  S. C. Wagaj,et al.  A simple analytical model of 4H-SiC MOSFET for high temperature circuit simulations , 2014, 2014 Annual IEEE India Conference (INDICON).

[13]  A. Hefner.  Modeling buffer layer IGBTs for circuit simulation , 1993, Proceedings of IEEE Power Electronics Specialist Conference - PESC '93.

[14]  N. Goldsman,et al.  A Physical Model of High Temperature 4H-SiC MOSFETs , 2008, IEEE Transactions on Electron Devices.

[15]  L. Tolbert,et al.  Active current balancing for parallel-connected silicon carbide MOSFETs , 2013, 2013 IEEE Energy Conversion Congress and Exposition.

[16]  Bruno Allard,et al.  State of the art of high temperature power electronics , 2009 .

[17]  B. Jayant Baliga,et al.  Fundamentals of Power Semiconductor Devices , 2008 .

[18]  Tore Undeland,et al.  Power Electronics: Converters, Applications and Design , 1989 .

[19]  M. Mudholkar,et al.  A datasheet driven power MOSFET model and parameter extraction procedure for 1200V, 20A SiC MOSFETs , 2011, Proceedings of the 2011 14th European Conference on Power Electronics and Applications.

[20]  Jun Wang,et al.  Characterization, Modeling, and Application of 10-kV SiC MOSFET , 2008, IEEE Transactions on Electron Devices.

[21]  Juin J. Liou,et al.  A review of recent MOSFET threshold voltage extraction methods , 2002, Microelectron. Reliab..

[22]  Allen R. Hefner,et al.  Compact models for silicon carbide power devices , 2004 .

[23]  P. Neudeck,et al.  High-temperature electronics - a role for wide bandgap semiconductors? , 2002, Proc. IEEE.

[24]  M. N. Yoder,et al.  Wide bandgap semiconductor materials and devices , 1996 .