论文信息 - Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment - 字舞流文

Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

H. Fouckhardt | J. Strassner | Christoph Doering | M. Kopnarski | A. Kleinschmidt | W. Bock | M. Wahl | Lars Barzen