Contact modeling and analysis of InAs HEMT transistors

Novel device concepts and better channel materials than Si are required to improve the performance of conventional metal-oxide-semiconductor field-effect transistors (MOSFETs). The exploration of III–V semiconductors is mainly driven by the extremely high electron mobility of the materials. Recently, several researches have demonstrated that III–V high electron mobility transistors (HEMTs) can achieve high-speed operation at low supply voltage for applications beyond Si-CMOS technology. While the intrinsic device performance looks promising, current prototypes are dramatically influenced by high contact resistances. From a modeling point of view the understanding of the intrinsic device performance is now quite advanced, while the understanding of the contacts remains quite limited. Hence, a precise theoretical approach is required to model the contact characteristics. This work investigates the contact resistance physics of InAs HEMT transistors. The Nano-Electronic Modeling Tool (NEMO5) is used to solve the non-equilibrium Green's function (NEGF) formalism which embeds Schrödinger and Poisson equations self-consistently. For this study a real-space effective mass approximation with a simple phonon scattering is utilized.

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