SiO2 buried layer formation by subcritical dose oxygen ion implantation

The structure of the silicon dioxide buried layer formed by oxygen ion implantation at a subcritical dose i.e., 1.3×1018 ion cm−2 at 200 keV is studied. The beneficial effect of a high annealing temperature at 1300 °C for 6 h is discussed. A method for estimation of the total amount of SiO2 precipitated in the silicon overlayer is also presented, and these results are correlated with published electrical measurements.

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