Hot Carrier Injection Stress Effect on a 65 nm LNA at 70 GHz
暂无分享,去创建一个
S. D. Yen | J. Yuan | J. S. Yuan | Y. Xu | Y. Bi | G. W. Hwang | Y. Xu | S. Yen | Y. Bi | G. Hwang
[1] Chih-Hung Chen,et al. Effects of hot-carrier stress on the performance of CMOS low-noise amplifiers , 2005, IEEE Transactions on Device and Materials Reliability.
[2] Thomas H. Lee,et al. The Design of CMOS Radio-Frequency Integrated Circuits: RF CIRCUITS THROUGH THE AGES , 2003 .
[3] M. J. Deen,et al. Effects of hot-carrier stress on the RF performance of 0.18 /spl mu/m technology NMOSFETs and circuits , 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).
[4] Vincent Huard,et al. Hot-Carrier Stress Effect on a CMOS 65-nm 60-GHz One-Stage Power Amplifier , 2010, IEEE Electron Device Letters.
[5] Jeffrey Bokor,et al. Extremely scaled silicon nano-CMOS devices , 2003, Proc. IEEE.
[6] P. Garcia,et al. A Wideband W-Band Receiver Front-End in 65-nm CMOS , 2008, IEEE Journal of Solid-State Circuits.
[7] A. De Keersgieter,et al. Channel Hot-Carrier Degradation in Short-Channel Transistors With High- $k$/Metal Gate Stacks , 2009, IEEE Transactions on Device and Materials Reliability.
[8] Elyse Rosenbaum,et al. Hot carrier induced degradation in deep submicron MOSFETs at 100 °C , 2000 .
[9] Danijela Cabric,et al. Future wireless systems: UWB, 60GHz, and cognitive radios , 2005, Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005..
[10] E. Rosenbaum,et al. On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing , 2000, IEEE Electron Device Letters.
[11] Hong Wang,et al. Degradation of High-Frequency Noise in nMOSFETs Under Different Modes of Hot-Carrier Stress , 2012, IEEE Transactions on Electron Devices.
[12] Roc Berenguer,et al. A Low Power 77 GHz Low Noise Amplifier With an Area Efficient RF-ESD Protection in 65 nm CMOS , 2010, IEEE Microwave and Wireless Components Letters.
[13] V. Huard,et al. Hot-carrier damage from high to low voltage using the energy-driven framework , 2007 .
[14] P. Wambacq,et al. Hot-carrier degradation on the analogue/RF performances of a 90nm RF-CMOS technology demonstrated in a 900MHz low-power LNA , 2005, IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech)..