Effect of InAs quantum dots on the Fermi level pinning of undoped-n+ type GaAs surface studied by contactless electroreflectance
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Baojian Xu | P. Jin | Z. Zhang | X. Q. Meng | F. Q. Liu | Yudong Li | Chaorong Li | S. Pan | C. Z. Zhang | Z. Wang | X. Meng
[1] K. Jacobi,et al. Atomically resolved structure of InAs quantum dots , 2001 .
[2] Z. G. Wang,et al. Photoluminescence of InAs quantum dots grown on GaAs surface , 2000 .
[3] I. Kamiya,et al. Local capacitance measurements on InAs dot-covered GaAs surfaces by scanning capacitance microscopy , 2000 .
[4] W. Masselink,et al. MODIFICATION OF THE FERMI-LEVEL PINNING OF GAAS SURFACES THROUGH INAS QUANTUM DOTS , 1999 .
[5] Pierre Petroff,et al. Imaging and probing electronic properties of self-assembled InAs quantum dots by atomic force microscopy with conductive tip , 1999 .
[6] Z. G. Wang,et al. Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy , 1998 .
[7] R. Lowe-Webb,et al. Determination of the shape of self-organized InAs/GaAs quantum dots by reflection high energy electron diffraction , 1998 .
[8] T. Sakurai,et al. ATOMIC STRUCTURE OF FACETED PLANES OF THREE-DIMENSIONAL INAS ISLANDS ON GAAS(001) STUDIED BY SCANNING TUNNELING MICROSCOPE , 1998 .
[9] Hongen Shen,et al. Franz–Keldysh oscillations in modulation spectroscopy , 1995 .
[10] Fred H. Pollak,et al. Novel contactless mode of electroreflectance , 1991 .
[11] D. Arent,et al. Franz–Keldysh oscillations originating from a well‐controlled electric field in the GaAs depletion region , 1989 .
[12] Nikolai N. Ledentsov,et al. Quantum dot heterostructures , 1999 .
[13] Bernard Gil,et al. Group III nitride semiconductor compounds : physics and applications , 1998 .