Scalability of strained nitride capping layers for future CMOS generations

This paper investigates the layout dependence of strain induced in transistor channels, for technologies that use strained nitride capping layers (or contact etch stop layers - CESL). It is shown that the sensitivity in dense structures will be reduced for thinner nitride capping layers and scaled spacers. In isolated structures, the effects of STI- and CESL-induced stress are additive. Guidelines for CESL-scaling in future technologies are proposed.

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