Proton irradiation induced defects in oxygenated Si p-n junctions

The proton irradiation induced defects in oxygenated Si p-n junctions have been investigated using both optical charging spectroscopy (OCS) and thermally stimulated currents (TSC) methods in the temperature range 25-250 K. The measurements were performed for 3 fluences of proton irradiation: 1.07/spl times/10/sup 12/ cm/sup -2/, 1.084/spl times/10/sup 13/ cm/sup -2/ and 1.19/spl times/10/sup 14/ cm/sup -2/.