ACE: A robust variability and aging sensor for high-k/metal gate SoC

A novel on-chip variability and aging sensor has been designed for robust generation of a voltage guard band in high-K/metal gate technologies. It is the first single sensor solution that is capable of guard-banding for both NBTI and PBTI effects. It offers the SoC the capability to dynamically adjust the on-chip guard-band for joint power-reliability optimization.

[1]  Min Chen,et al.  Aging sensors for workload centric guardbanding in dynamic voltage scaling applications , 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

[2]  Paolo A. Aseron,et al.  A 45 nm Resilient Microprocessor Core for Dynamic Variation Tolerance , 2011, IEEE Journal of Solid-State Circuits.

[3]  Min Chen,et al.  Asymmetric Aging and Workload Sensitive Bias Temperature Instability Sensors , 2012, IEEE Design & Test of Computers.

[4]  H. Kufluoglu,et al.  An analysis Of the benefits of NBTI recovery under circuit operating conditions , 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).

[5]  Uming Ko,et al.  SmartReflex Power and Performance Management Technologies for 90 nm, 65 nm, and 45 nm Mobile Application Processors , 2010, Proceedings of the IEEE.

[6]  Srikanth Krishnan,et al.  Product drift from NBTI: Guardbanding, circuit and statistical effects , 2010, 2010 International Electron Devices Meeting.