The Gentle Electronic Nature of Pulsed Beam Annealing, or Does It Really Go Superfluid?
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[1] R. Yen,et al. Phase transformation on and charged particle emission from a silicon crystal surface, induced by picosecond laser pulses , 1981 .
[2] K. Abe,et al. Nonlinear transmission of intense laser pulse in silicon-on-sapphire , 1981 .
[3] J. V. Vechten,et al. Experimental tests for boson condensation and superconductivity in semiconductors during pulsed beam annealing , 1981 .
[4] A. Baldereschi,et al. Relevance of non-linear screening in covalent semiconductors , 1981 .
[5] J. Bok. Effect of electron-hole pairs on the melting of silicon , 1981 .
[6] A. Pospieszczyk,et al. Measurement of Lattice Temperature of Silicon during Pulsed Laser Annealing , 1981 .
[7] A. Compaan,et al. Plasma annealing state of semiconductors; plasma condensation to a superconductivity- like state at 1000 K? , 1981 .
[8] M. C. Lee,et al. Induced Absorption in Silicon under Intense Laser Excitation: Evidence for a Self-Confined Plasma , 1981 .
[9] M. Wautelet,et al. Carrier diffusion in semiconductors subject to large gradients of excited carrier density , 1981 .
[10] M. Wautelet,et al. Variation of semiconductor band gaps with lattice temperature and with carrier temperature when these are not equal , 1981 .
[11] Y. M. Cho,et al. Extended Gauge Theory and Its Mass Spectrum , 1981 .
[12] M. Suzuki,et al. Dynamics of laser‐induced vaporization for ultrafast deposition of amorphous silicon films , 1981 .
[13] A. Dvurechenskii,et al. Influence of the Thickness of Damaged Layers on the Migration of Dopands during Laser Annealing in Implanted Silicon , 1981, February 16.
[14] J. .. Basson,et al. Comment on "Threshold for optically induced dislocation glide in GaAs-GaAlAs double heterostructures: Degradation via a new cooperative phenomenon?" , 1981 .
[15] G. G. Bentini,et al. Laser Annealing of Damaged Silicon Covered with a Metal Film: Test for Epitaxial Growth from the Melt , 1981 .
[16] M. Noga. The theory of laser annealing of disordered semiconductors , 1980 .
[17] H. Yoshizawa,et al. Neutron Diffraction Experiment on a Randomly Mixed Antiferromagnet with Competing Spin Anisotropies , 1980 .
[18] W. Dumke. On laser annealing and lattice melting , 1980 .
[19] A. Compaan,et al. Raman Measurement of Lattice Temperature during Pulsed Laser Heating of Silicon , 1980 .
[20] J. Pouget,et al. Etude par diffusion des rayons X du mécanisme de polymérisation et des transitions de phase du diacétylène : bis-(p-toluène sulfonate) de 2,4 hexadiyne 1,6 diol , 1980 .
[21] R. Hodgson,et al. Time dependence of the reflectivity of Si at 633 and 488 nm during pulsed laser annealing , 1980 .
[22] Ellen J. Yoffa,et al. Dynamics of dense laser-induced plasmas , 1980 .
[23] M. Wautelet,et al. Cohesion of solids under laser irradiation , 1980 .
[24] R. Tsu,et al. Reasons to believe pulsed laser annealing of Si does not involve simple thermal melting , 1979 .
[25] Raphael Tsu,et al. Nonthermal pulsed laser annealing of Si; plasma annealing , 1979 .
[26] F. Saris,et al. Dopant segregation in silicon by pulsed-laser annealing: A test case for the concept of thermal melting , 1979 .
[27] G. D. Watkins,et al. Recombination-enhanced migration of interstitial aluminum in silicon , 1979 .
[28] R. Slusher,et al. Calculation of the dynamics of surface melting during laser annealing , 1979 .
[29] S. U. Campisano,et al. A melting model for pulsing‐laser annealing of implanted semiconductors , 1979 .
[30] W. A. Dench,et al. Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solids , 1979 .
[31] P. P. Pronko,et al. Theoretical analysis of thermal and mass transport in ion‐implanted laser‐annealed silicon , 1978 .
[32] M. Small,et al. Threshold for Optically Induced Dislocation Glide in GaAs-AlGaAs Double Heterostructures: Degradation via a New Cooperative Phenomenon? , 1978 .
[33] V. Heine,et al. Effect of electron-hole pairs on phonon frequencies in Si related to temperature dependence of band gaps , 1976 .
[34] C. Canali,et al. Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature , 1975, IEEE Transactions on Electron Devices.
[35] Lionel C. Kimerling,et al. Observation of recombination-enhanced defect reactions in semiconductors , 1974 .
[36] N. Nilsson,et al. Recombination in strongly excited silicon , 1971 .
[37] Charles C. Wang,et al. Observation of Optical Mixing Due to Conduction Electrons in n -Type Germanium , 1970 .
[38] Helmut Kanter,et al. Slow-Electron Mean Free Paths in Aluminum, Silver, and Gold , 1970 .
[39] David E. Aspnes,et al. Franz-Keldysh contributions to third-order optical susceptibilities , 1969 .
[40] W. Gauster. Electronic Dilation in Germanium and Silicon , 1969 .
[41] R. Martin. Dielectric screening model for lattice vibrations of diamond-structure crystals , 1969 .
[42] W. Spicer,et al. Photoemission Studies of the Noble Metals. I. Copper , 1969 .
[43] J. Wynne,et al. Optical Third-Order Mixing in GaAs, Ge, Si, and InAs , 1969 .
[44] G. Boyd,et al. STUDY OF OPTICAL DIFFERENCE MIXING IN Ge AND Si USING A CO2 GAS LASER , 1968 .
[45] David E. Aspnes,et al. Electric Field Effects on the Dielectric Constant of Solids , 1967 .
[46] P. Anderson. Random-Phase Approximation in the Theory of Superconductivity , 1958 .
[47] B. Pannetier,et al. Measurement of phonon lifetimes in bulk superconducting tin , 1981 .
[48] E. Yoffa. PLASMA BOTTLENECKS: DYNAMICS OF LASER-INDUCED PLASMAS , 1980 .
[49] R. Collins,et al. A computer simulation of laser annealing silicon at 1.06 μm , 1979 .
[50] M. F. Galjautdinov,et al. Some features of laser annealing of implanted silicon layers , 1978 .
[51] J. Bourgoin,et al. Enhanced diffusion mechanisms , 1978 .