Fabrication of a 80 nm self-aligned T-gate AlInAs/GaInAs HEMT
暂无分享,去创建一个
The authors report on the fabrication and characterization of a high-performance 80-nm self-aligned T-gate AlInAs/GaInAs high electron mobility transistor (SAGHEMT). The 80 nm*50 mu m devices reported exhibit good pinchoff characteristics, high transconductance (g/sub m/=1150 mS/mm), low output conductance (g/sub ds/=120 mS/mm at RF), and state-of-the-art current gain cutoff frequency (f/sub T/=250 GHz). Modeling and analysis indicate that it is possible to significantly improve the performance of AlInAs/GaInAs SAGHEMTs by further reducing the gate length and/or optimizing the device structure.<<ETX>>
[1] H. Ohno,et al. Low Field Transport Properties of Two-Dimensional Electron Gas in Selectively Doped N-AlGaAs/GaInAs/GaAs Pseudomorphic Structures , 1988 .
[2] H. Ohno,et al. Growth of a (GaAs)n/(InAs)n Superlattice Semiconductor by Molecular Beam Epitaxy , 1985 .
[3] A. Cho,et al. Growth of a novel InAs‐GaAs strained layer superlattice on InP , 1985 .
[5] P. Chao,et al. DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTs , 1989 .