论文信息 - Improved modeling accuracy of thick metal passive SiGe/BiCMOS components for UWB using ADS momentum

Improved modeling accuracy of thick metal passive SiGe/BiCMOS components for UWB using ADS momentum

This paper demonstrates the use of ADS Momentum to model spiral and straight line inductors for ultra wide band (UWB) applications over a silicon substrate. The main focus is on the improvements in the most recent version of the Advanced-Design System (ADS 2003C), which employs a new algorithm to model metal thickness. Results for two different inductor topologies show the increased accuracy of using a thick metal approach, versus that of sheet conductors, when compared to measured test site data.

C. Mathis | B. Foley | J. Rascoe | Y. Tretiakov | R. Groves

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