Three-Dimensional Integration Approach to High-Density Memory Devices
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U-In Chung | Hojung Kim | Sanghun Jeon | Myoung-Jae Lee | Jaechul Park | Sangbeom Kang | Hyun-Sik Choi | Churoo Park | Hong-Sun Hwang | Changjung Kim | Jaikwang Shin | U. Chung | Myoung-Jae Lee | Changjung Kim | S. Jeon | Hyun-Sik Choi | Jae-Chul Park | Hojung Kim | Jaikwang Shin | H. Hwang | Churoo Park | Sangbeom Kang
[1] Chang-gyu Hwang,et al. Nanotechnology enables a new memory growth model , 2003 .
[2] Rainer Waser,et al. Complementary resistive switches for passive nanocrossbar memories. , 2010, Nature materials.
[3] Pedro Barquinha,et al. Transparent p-type SnOx thin film transistors produced by reactive rf magnetron sputtering followed by low temperature annealing , 2010 .
[4] Yun Hee Jang,et al. Observation of molecular orbital gating , 2009, Nature.
[5] Thomas J. Morrow,et al. Programmed Assembly of DNA-Coated Nanowire Devices , 2009, Science.
[6] U-In Chung,et al. Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors , 2009 .
[7] Hideo Hosono,et al. p-channel thin-film transistor using p-type oxide semiconductor, SnO , 2008 .
[8] Behzad Razavi,et al. Design of Analog CMOS Integrated Circuits , 1999 .
[9] S. Bauer,et al. Organic Nonvolatile Memory Transistors for Flexible Sensor Arrays , 2009, Science.
[10] Sheng-Po Chang,et al. Amorphous hafnium-indium-zinc oxide semiconductor thin film transistors , 2012 .
[11] Dong Woo Kim,et al. Vertical cell array using TCAT(Terabit Cell Array Transistor) technology for ultra high density NAND flash memory , 2006, 2009 Symposium on VLSI Technology.
[12] H. Ohta,et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors , 2004, Nature.
[13] H. Dai,et al. Narrow graphene nanoribbons from carbon nanotubes , 2009, Nature.
[14] I. Baek,et al. Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory , 2008 .
[15] Charles M. Lieber,et al. Nanoelectronics from the bottom up. , 2007, Nature materials.
[16] H. R. Krishnamurthy,et al. Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor. , 2008, Nature nanotechnology.
[17] ERIC M. VOGEL,et al. Technology and metrology of new electronic materials and devices. , 2007, Nature nanotechnology.
[18] Young-soo Park,et al. Low‐Temperature‐Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High‐Density Non‐volatile Memory , 2009 .
[19] Pedro Barquinha,et al. Thin-film transistors based on p-type Cu2O thin films produced at room temperature , 2010 .
[20] Gengfeng Zheng,et al. Detection, Stimulation, and Inhibition of Neuronal Signals with High-Density Nanowire Transistor Arrays , 2006, Science.
[21] Eunha Lee,et al. Short Channel Characteristics of Gallium–Indium–Zinc–Oxide Thin Film Transistors for Three-Dimensional Stacking Memory , 2008, IEEE Electron Device Letters.
[22] Pedro Barquinha,et al. Oxide semiconductors: Order within the disorder , 2009 .
[23] Sanghun Jeon,et al. Thermal Stability and Memory Characteristics of HfON Trapping Layer for Flash Memory Device Applications , 2009 .
[24] H. Ohno,et al. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO , 2004 .