Comparison of programmable linear resistors based on quasi-floating gate MOSFETs

Programmable linear resistors are usually implemented using MOS transistors biased in the triode region. Recently a technique, based on quasi-floating-gate transistors, has been introduced to linearize the V-I characteristic of a MOS transistor operating in the ohmic region. In this paper an improved programmable linear resistor also based on quasi-floating gate techniques is presented, which provides a larger conductance than the conventional fixed gate- voltage implementation and features better performance in terms of linearity.

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