100GHz SiGe:C HBTs using non selective base epitaxy

We report the fabrication and electrical characterization of high performance 0.25μm SiGe HBTs incorporating a carbon-doped base grown using non selective epitaxy. A transit frequency fT of 97GHz and a maximum oscillation frequency fmax of 94GHz have been obtained together with well balanced static parameters. These are the highest frequency performances reported to date for non selective epitaxy SiGe HBTs, including carbon-doped