Structure of As‐Deposited LPCVD Silicon Films at Low Deposition Temperatures and Pressures

In this work we studied the effect of the deposition temperature, total pressure, source gas dilution, and deposition rate on the structure of the as-deposited silicon films. Depositions were performed by low pressure chemical vapor deposition (LPCVD) in the temperature range of 530 to 600 o C and in the pressure range of 2 to 300 mTorr. For a fixed deposition temperature a phase transition from polycrystalline to amorphous silicon was shown to occur when the deposition rate exceeded a critical value