Design of In AlN/GaN Heterostructure-Based Logic Cells

This paper addresses a development of electronic circuits designed for executing fundamental Boolean logic functions based on In AlN/GaN heterostructures. The top-down design flow of the mentioned circuits using an in-house fabrication process is described. The front-end design includes the creation of a scalable behavioral model of stand-alone high electron mobility transistors (HEMTs), followed by the design of basic logic cells and circuits. The back-end flow consists of the full-custom design of lithographic masks required for a successful fabrication process. The paper discusses advantages, drawbacks and challenges of the presented procedure as well as expected electrical parameters of the fabricated circuits.