论文信息 - I band (8-10 GHz) TRAPATT-diode sources

I band (8-10 GHz) TRAPATT-diode sources

The feasibility of a high-pulsed-power I band source using both n-type and p-type TRAPATT diodes has been demonstrated. Deep-diffused n-type diodes have generated more than 100 W in the I band.

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