An inexpensive method of detecting localised parametric defects in static RAM

The author presents an effective method of testing spot defects causing delay faults in SRAM circuits, without having to perform a full speed test of every single cell in a chip. The method is based on the detection of spot defects through the imbalance they cause to memory cells by transforming the imbalance effect into a permanent error. Such tests may be performed at a low speed, while retaining an excellent ability to detect non-catastrophic spot defects.<<ETX>>

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