Mechanisms for optical loss in SOI waveguides for mid-infrared wavelengths around 2 μm

We report the measurement of optical loss in submicron silicon-on-insulator waveguides at a wavelength of 2.02 μm for the fundamental TE mode. Devices were fabricated at IMEC and at A⋆STAR's Institute of Microelectronics (IME) and thus these measurements are applicable to studies which require fabrication using standard foundry technology. Propagation loss for strip and rib waveguides of 3.3 ± 0.5 and 1.9 ± 0.2 dB cm−1 were measured. Waveguide bending loss in strip and rib waveguides was measured to be 0.36 and 0.68 dB per 90° bend for a radius of 3 μm. Doped waveguide loss in rib waveguides was measured for both n-type and p-type species at two doping densities for each doping type. Measured results from propagation, bending, and free-carrier loss were found to be in good agreement with analytical or numerical models. Loss due to lattice defects introduced by ion-implantation is found to be underestimated by a previously proposed empirical model. The thermal annealing of the lattice defects is consistent with removal of the silicon divacancy.

[1]  R. Won.  Is it crunch time? , 2015, Nature Photonics.

[2]  David J. Thomson,et al.  High-speed detection at two micrometres with monolithic silicon photodiodes , 2015, Nature Photonics.

[3]  R. Soref.  Silicon-based silicon–germanium–tin heterostructure photonics , 2014, Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences.

[4]  D. Richardson,et al.  Diode-pumped wideband thulium-doped fiber amplifiers for optical communications in the 1800 - 2050 nm window. , 2013, Optics express.

[5]  K. Bergman,et al.  Error-Free Operation of an All-Silicon Waveguide Photodiode at 1.9 $\mu{\rm m}$ , 2013, IEEE Photonics Technology Letters.

[6]  David J. Richardson,et al.  Diode-pumped Wideband Thulium-doped Fiber Amplifiers for Optical Communications in the 1800 - 2050 nm Window , 2013 .

[7]  Yun Wang,et al.  Universal grating coupler design , 2013, Other Conferences.

[8]  Timo Aalto,et al.  Dramatic size reduction of waveguide bends on a micron-scale silicon photonic platform. , 2013, Optics express.

[9]  K. Bergman,et al.  Error-free operation of an all-Silicon waveguide photodiode at 1.9 μm , 2013, CLEO: 2013.

[10]  G. Roelkens,et al.  Mid-infrared silicon photonics , 2013, 2013 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (OFC/NFOEC).

[11]  Tymon Barwicz,et al.  Demonstration of electrooptic modulation at 2165nm using a silicon Mach-Zehnder interferometer. , 2012, Optics express.

[12]  Yu-Chi Chang,et al.  Low-loss germanium strip waveguides on silicon for the mid-infrared. , 2012, Optics letters.

[13]  M. Nedeljkovic,et al.  Free-Carrier Electrorefraction and Electroabsorption Modulation Predictions for Silicon Over the 1–14- $\mu\hbox{m}$ Infrared Wavelength Range , 2011, IEEE Photonics Journal.

[14]  W. Bogaerts,et al.  Compact Single-Mode Silicon Hybrid Rib/Strip Waveguide With Adiabatic Bends , 2011, IEEE Photonics Journal.

[15]  K. Yvind,et al.  Ultra-low-loss inverted taper coupler for silicon-on-insulator ridge waveguide , 2010 .

[16]  R. Soref.  Mid-infrared photonics in silicon and germanium , 2010 .

[17]  Sanja Zlatanovic,et al.  Mid-infrared wavelength conversion in silicon waveguides using ultracompact telecom-band-derived pump source , 2010 .

[18]  T. Baehr‐Jones,et al.  Silicon-on-sapphire integrated waveguides for the mid-infrared. , 2009, Optics express.

[19]  Milan M. Milosevic,et al.  Rib waveguides for mid-infrared silicon photonics , 2009 .

[20]  P. Waldron,et al.  Correlation of Scattering Loss, Sidewall Roughness and Waveguide Width in Silicon-on-Insulator (SOI) Ridge Waveguides , 2009, Journal of Lightwave Technology.

[21]  D. Logan,et al.  Modeling Defect Enhanced Detection at 1550 nm in Integrated Silicon Waveguide Photodetectors , 2009, Journal of Lightwave Technology.

[22]  Richard A. Soref,et al.  Silicon waveguided components for the long-wave infrared regionThis article was submitted to the spe , 2006 .

[23]  L. Vivien,et al.  Propagation loss in single-mode ultrasmall square silicon-on-insulator optical waveguides , 2006, Journal of Lightwave Technology.

[24]  S. Spector,et al.  Silicon waveguide sidewall smoothing by wet chemical oxidation , 2005, Journal of Lightwave Technology.

[25]  L. Vivien,et al.  Size influence on the propagation loss induced by sidewall roughness in ultrasmall SOI waveguides , 2004, IEEE Photonics Technology Letters.

[26]  Y. Vlasov,et al.  Losses in single-mode silicon-on-insulator strip waveguides and bends. , 2004, Optics express.

[27]  A. Knights,et al.  Silicon Photonics: An Introduction , 2004 .

[28]  C. P. Burrows,et al.  Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon , 2002 .

[29]  L C Kimerling,et al.  Fabrication of ultralow-loss Si/SiO(2) waveguides by roughness reduction. , 2001, Optics letters.

[30]  L. Kimerling,et al.  Effect of size and roughness on light transmission in a Si/SiO2 waveguide: Experiments and model , 2000 .

[31]  James W. Taylor,et al.  Correlation of atomic force microscopy sidewall roughness measurements with scanning electron microscopy line-edge roughness measurements on chemically amplified resists exposed by x-ray lithography , 1999 .

[32]  Joseph T. Boyd,et al.  Measurement of mode field profiles and bending and transition losses in curved optical channel waveguides , 1997 .

[33]  F. Payne,et al.  A theoretical analysis of scattering loss from planar optical waveguides , 1994 .

[34]  H. Melchior,et al.  Novel method for analysis of curved optical rib-waveguides , 1989 .

[35]  L. M. Schiavone,et al.  Bend losses in GaAs/AlGaAs optical waveguides , 1987 .

[36]  R. Soref,et al.  Electrooptical effects in silicon , 1987 .

[37]  J. Ziegler.  The stopping and range of ions in solids vol 1 : The stopping and ranges of ions in matter , 2013 .

[38]  M. Austin.  GaAs/GaAlAs Curved Rib Waveguides , 1982 .

[39]  Dietrich Marcuse,et al.  Mode conversion caused by surface imperfections of a dielectric slab waveguide , 1969 .

[40]  E. Marcatili.  Bends in optical dielectric guides , 1969 .

[41]  J. Borders,et al.  DIRECT EVIDENCE OF DIVACANCY FORMATION IN SILICON BY ION IMPLANTATION , 1969 .