论文信息 - The effects of total ionizing dose on the transient response of SiGe BiCMOS technologies

The effects of total ionizing dose on the transient response of SiGe BiCMOS technologies

The effects of ionizing radiation on the single-event transient (SET) response of devices in a silicon-germanium (SiGe) bipolar and complementary metal oxide semiconductor (BiCMOS) platform is examined for the first time. Pulsed-laser measurements are leveraged to analyze the transient response of both npn SiGe HBT and nFET device structures after exposure to 10 keV X-rays. Measured data and simulations confirm a change to both the shape and magnitude of the transient response as a function of total ionizing dose (TID). This change is shown to be closely associated with the total dose degradation of the device via the introduction of trapped charge in the relevant oxides.

[1] S. Buchner,et al. Impact of Cumulative Irradiation Degradation and Circuit Board Design on the Parameters of ASETs Induced in Discrete BJT-based Circuits , 2015, IEEE Transactions on Nuclear Science.

[2] Zachary E. Fleetwood,et al. An Investigation of the SET Response of Devices and Differential Pairs in a 32-nm SOI CMOS Technology , 2015, IEEE Transactions on Nuclear Science.

[3] John D. Cressler,et al. Advanced SiGe BiCMOS Technology for Multi-Mrad Electronic Systems , 2014, IEEE Transactions on Device and Materials Reliability.

[4] B. Narasimham,et al. Effects of Ionizing Radiation on Digital Single Event Transients in a 180-nm Fully Depleted SOI Process , 2009, IEEE Transactions on Nuclear Science.

[5] F. Saigne,et al. Accelerated Irradiation Method to Study Synergy Effects in Bipolar Integrated Circuits , 2009, IEEE Transactions on Nuclear Science.

[6] D. McMorrow,et al. Total dose effects on error rates in linear bipolar systems , 2007, 2007 9th European Conference on Radiation and Its Effects on Components and Systems.

[7] R.,et al. Challenges in hardening technologies using shallow-trench isolation , 1998 .

[8] D. McMorrow,et al. The Effects of Low Dose-Rate Ionizing Radiation on the Shapes of Transients in the L>M124 Operational Amplifier , 2008, IEEE Transactions on Nuclear Science.