N+/P-well 포토다이오드를 가지는 OFD 방식의 CMOS 이미지 센서 픽셀의 SPICE 모델링

CMOS image sensor pixel design requires a accurate spice modeling to determine pixel perfomance. In this paper, a standard N+/P-well photodiode with a OFD pixel has been modeled using a 0.5 ㎛ CMOS process technology. Pixel parameters such as voltage swing, pixel capacitances have been modeled using individuals components. These components include pmos reset source region, N+/P-well photodiode and source follower gate capacitances. In addition, non-linear effect of the photodiode is included in the model.