High-speed epitaxial growth of AlN above 1200∘C by hydride vapor phase epitaxy
暂无分享,去创建一个
[1] Akinori Koukitu,et al. Thermodynamic Analysis of Hydride Vapor Phase Epitaxy of GaN , 1998 .
[2] Y. Kumagai,et al. Hydride vapor phase epitaxy of AlN : thermodynamic analysis of aluminum source and its application to growth , 2003 .
[3] Y. Kumagai,et al. Growth of thick AlN layers by hydride vapor-phase epitaxy , 2005 .
[4] Y. Kumagai,et al. Thermodynamics on hydride vapor phase epitaxy of AlN using AlCl3 and NH3 , 2006 .