Measurement-Based Method to Characterize Parasitic Parameters of the Integrated Power Electronics Modules

A measurement-based method for extracting the parasitic parameters of active power electronics modules (IPEMs) is proposed. Parasitic inductances and capacitances inside the IPEM can all be extracted using this method without destroying the structure. The linearized model is derived from impedance measurement and it is valid from low frequency to frequencies as high as 100 MHz. Extracted parameters are compared to those from commercial software and the results are in good agreement. A parallel resonance method is proposed for the characterization of common-mode capacitances

[1]  M. H. Pong,et al.  Modeling and simulation for conducted common-mode current in switching circuits , 2001, 2001 IEEE EMC International Symposium. Symposium Record. International Symposium on Electromagnetic Compatibility (Cat. No.01CH37161).

[2]  J. Roudet,et al.  A new technique for spectral analysis of conducted noise of a SMPS including interconnects , 1997, PESC97. Record 28th Annual IEEE Power Electronics Specialists Conference. Formerly Power Conditioning Specialists Conference 1970-71. Power Processing and Electronic Specialists Conference 1972.

[3]  Fred C. Lee,et al.  Embedded power technology for IPEMs packaging applications , 2001, APEC 2001. Sixteenth Annual IEEE Applied Power Electronics Conference and Exposition (Cat. No.01CH37181).

[4]  Fred C. Lee,et al.  Conducted EMI analysis of a boost PFC circuit , 1997, Proceedings of APEC 97 - Applied Power Electronics Conference.

[5]  Guo-Quan Lu,et al.  Application of solderable devices for assembling three-dimensional power electronics modules , 2000, 2000 IEEE 31st Annual Power Electronics Specialists Conference. Conference Proceedings (Cat. No.00CH37018).

[6]  J.D. Van Wyk,et al.  Power electronics technology at the dawn of the new millenium-status and future , 1999, 30th Annual IEEE Power Electronics Specialists Conference. Record. (Cat. No.99CH36321).

[7]  Krishna Shenai,et al.  RF de-embedding technique for extracting power MOSFET package parasitics , 2000, IWIPP 2000. International Workshop on Integrated Power Packaging (Cat. No.00EX426).

[8]  Fred C. Lee,et al.  Characterization and analysis of parasitic parameters and their effects in power electronics circuit , 1996, PESC Record. 27th Annual IEEE Power Electronics Specialists Conference.

[9]  F.C. Lee,et al.  Measurement-based characterization method for integrated power electronics modules , 2003, Eighteenth Annual IEEE Applied Power Electronics Conference and Exposition, 2003. APEC '03..

[10]  Jih-Sheng Lai,et al.  Characterization of power electronics system interconnect parasitics using time domain reflectometry , 1998 .

[11]  D. Silber,et al.  Exact inductive parasitic extraction for analysis of IGBT parallel switching including DCB-backside eddy currents , 2000, 2000 IEEE 31st Annual Power Electronics Specialists Conference. Conference Proceedings (Cat. No.00CH37018).

[12]  J. H. Bohn,et al.  Integrated electrical and thermal modeling and analysis of IPEMs , 2000, COMPEL 2000. 7th Workshop on Computers in Power Electronics. Proceedings (Cat. No.00TH8535).

[13]  Michael Tao Zhang.  Electrical, Thermal, and EMI Designs of High-Density, Low-Profile Power Supplies , 1998 .

[14]  Krishna Shenai,et al.  Parasitic extraction methodology for insulated gate bipolar transistors , 2000, APEC 2000. Fifteenth Annual IEEE Applied Power Electronics Conference and Exposition (Cat. No.00CH37058).