论文信息 - 10 µm pixel-to-pixel pitch hybrid backside illuminated AlGaN-on-Si imagers for solar blind EUV radiation detection

10 µm pixel-to-pixel pitch hybrid backside illuminated AlGaN-on-Si imagers for solar blind EUV radiation detection

We present the first measurement results from hybrid AlGaN-on-Si-based Extreme Ultraviolet (EUV) imagers with 10 µm pixel-to-pixel pitch. The 256×256 backside illuminated Focal Plane Arrays (FPAs) were hybridized to dedicated Si-based CMOS Readouts (ROICs). The AlGaN active layer with 40% Al concentration provides an intrinsic rejection of wavelengths larger than 280 nm (solar blindness), together with enhanced radiation hardness (1). Sensitivity in Deep UV (DUV), Far UV (FUV) and Extreme UV (EUV) was verified using synchrotron radiation down to a wavelength of 1 nm.

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[2] Eric Costard,et al. First demonstration and performance of AlGaN based focal plane array for deep-UV imaging , 2009, Remote Sensing.

[3] P. De Moor,et al. Backside-Illuminated GaN-on-Si Schottky Photodiodes for UV Radiation Detection , 2009, IEEE Electron Device Letters.

[4] Joachim John,et al. Radiation damage resistance of AlGaN detectors for applications in the extreme-ultraviolet spectral range. , 2009, The Review of scientific instruments.