论文信息 - Endurance characterization of the Cu-dope HfO2 based selection device with one transistor-one selector structure

Endurance characterization of the Cu-dope HfO2 based selection device with one transistor-one selector structure

We investigated the endurance characteristics of a Cu-doped HfO2 selector device in one transistor-one selector (1T1S) structure, which is fully compatible with standard BEOL process. The device exhibits high endurance of 1010 under 10 μΑ compliance current. However, reduced endurance (105) was observed as increasing the compliance up to 100 μΑ. Under the condition of high operation, intrinsic defect in the HfO2 layer was possibly generated and resulted in endurance degradation.

[1] Anupam Chattopadhyay,et al. In-memory adder functionality in 1S1R arrays , 2015, 2015 IEEE International Symposium on Circuits and Systems (ISCAS).

[2] Doo Seok Jeong,et al. A Review of Three‐Dimensional Resistive Switching Cross‐Bar Array Memories from the Integration and Materials Property Points of View , 2014 .

[3] Qing Luo,et al. Cu BEOL compatible selector with high selectivity (>107), extremely low off-current (∼pA) and high endurance (>1010) , 2015, 2015 IEEE International Electron Devices Meeting (IEDM).