Molecular Beam Epitaxy of GaAsBi and Related Quaternary Alloys

[1]  K. Oe,et al.  Deep-Hole Traps in p-Type GaAs1-xBix Grown by Molecular Beam Epitaxy , 2011 .

[2]  J. David,et al.  The effect of Bi composition to the optical quality of GaAs1−xBix , 2011 .

[3]  J. Zide,et al.  Optical and electrical characterization of InGaBiAs for use as a mid-infrared optoelectronic material , 2011 .

[4]  Yoriko Tominaga,et al.  Low Temperature Dependence of Oscillation Wavelength in GaAs1-xBix Laser by Photo-Pumping , 2010 .

[5]  M. Koch,et al.  Clustering effects in Ga(AsBi) , 2010 .

[6]  B. Johansson,et al.  Bismuth-stabilized c(2X6) reconstruction on a InSb(100) substrate: Violation of the electron counting model , 2010 .

[7]  J. Nakamura,et al.  Variable stoichiometry in Sb-induced(2×4)reconstructions on GaAs(001) , 2009 .

[8]  T. Tiedje,et al.  Composition dependence of photoluminescence of GaAs1-xBix alloys , 2009 .

[9]  M. Henini,et al.  Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence , 2009 .

[10]  J. Kollár,et al.  Bismuth-stabilized (2x1) and (2x4) reconstructions on GaAs(100) surfaces: Combined first-principles, photoemission, and scanning tunneling microscopy study , 2008 .

[11]  K. Oe,et al.  Structural investigation of GaAs1-xBix/GaAs multiquantum wells , 2008 .

[12]  K. Oe,et al.  Growth of GaAs1–xBix/GaAs multi‐quantum wells by molecular beam epitaxy , 2008 .

[13]  J. H. Blokland,et al.  Influence of bismuth incorporation on the valence and conduction band edges of GaAs1−xBix , 2008 .

[14]  J. Kollár,et al.  Anomalous bismuth-stabilized (2x1) reconstructions on GaAs(100) and InP(100) surfaces. , 2008, Physical Review Letters.

[15]  M. Henini,et al.  Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates , 2007 .

[16]  Junhao Chu,et al.  Physics and Properties of Narrow Gap Semiconductors , 2007 .

[17]  K. Oe,et al.  Influence of Thermal Annealing Treatment on the Luminescence Properties of Dilute GaNAs–Bismide Alloy , 2007 .

[18]  A. Krotkus,et al.  Valence band anticrossing in GaBixAs1−x , 2007 .

[19]  K. Oe,et al.  Molecular-beam epitaxy of GaNAsBi layer for temperature-insensitive wavelength emission , 2007 .

[20]  K. Oe,et al.  Temperature dependence of Bi behavior in MBE growth of InGaAs/InP , 2007 .

[21]  M. Pessa,et al.  Structural properties of Bi-stabilized reconstructions of GaInAs(100) surface , 2007 .

[22]  K. Oe,et al.  Bismuth containing III–V quaternary alloy InGaAsBi grown by MBE , 2006 .

[23]  M. Kuzmin,et al.  Structural properties of Bi-terminated GaAs(0 0 1) surface , 2006 .

[24]  Wei Huang,et al.  New semiconductor alloy GaNAsBi with temperature‐insensitive bandgap , 2006 .

[25]  K. Oe,et al.  Lattice Distortion of GaAsBi Alloy Grown on GaAs by Molecular Beam Epitaxy , 2006 .

[26]  K. Oe,et al.  Molecular-beam epitaxy and characteristics of GaNyAs1−x−yBix , 2005 .

[27]  K. Oe,et al.  New III–V Semiconductor InGaAsBi Alloy Grown by Molecular Beam Epitaxy , 2005 .

[28]  P. Wei,et al.  Band gaps of the dilute quaternary alloys GaNxAs1−x−yBiy and Ga1−yInyNxAs1−x , 2005 .

[29]  K. Oe,et al.  GaNyAs1-x-yBix Alloy Lattice Matched to GaAs with 1.3 µm Photoluminescence Emission , 2004 .

[30]  K. Oe,et al.  New Semiconductor GaNAsBi Alloy Grown by Molecular Beam Epitaxy , 2004 .

[31]  K. Oe,et al.  Metastable GaAsBi Alloy Grown by Molecular Beam Epitaxy , 2003 .

[32]  Jerry R. Meyer,et al.  Band parameters for nitrogen-containing semiconductors , 2003 .

[33]  Angelo Mascarenhas,et al.  Band gap of GaAs1−xBix, 0 , 2003 .

[34]  François Schiettekatte,et al.  Molecular beam epitaxy growth of GaAs1−xBix , 2003 .

[35]  M. Scheffler,et al.  Adatom kinetics on and below the surface: the existence of a new diffusion channel. , 2003, Physical review letters.

[36]  O. Wada,et al.  Temperature Dependence of GaAs1-xBix Band Gap Studied by Photoreflectance Spectroscopy , 2003 .

[37]  Wladek Walukiewicz,et al.  Band anticrossing in highly mismatched III-V semiconductor alloys , 2002 .

[38]  K. Oe Characteristics of Semiconductor Alloy GaAs1-xBix , 2002 .

[39]  A. Janotti,et al.  Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs , 2002 .

[40]  K. Oe Low-temperature metalorganic vapor-phase epitaxial growth of InGaAs layers on InP substrates , 2000 .

[41]  S. Ho,et al.  Growth of InxGa1−xAs/GaAs heterostructures using Bi as a surfactant , 2000 .

[42]  K. Oe,et al.  Fluorescence EXAFS Study on Local Structures around Bi Atoms in InAs1-xBix Grown by Low-pressure MOVPE , 1999 .

[43]  Kunishige Oe,et al.  New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy , 1998 .

[44]  K. Oe,et al.  Growth of Metastable Alloy InAsBi by Low-Pressure MOVPE , 1997 .

[45]  Kenji Shiraishi,et al.  Ga adatom diffusion on an As‐stabilized GaAs(001) surface via missing As dimer rows: First‐principles calculation , 1992 .

[46]  G. B. Stringfellow,et al.  Organometallic vapor phase epitaxial growth and characterization of InAsBi and InAsSbBi , 1989 .

[47]  Pashley Electron counting model and its application to island structures on molecular-beam epitaxy grown GaAs(001) and ZnSe(001). , 1989, Physical review. B, Condensed matter.

[48]  C. Wood,et al.  Indium antimonide‐bismuth compositions grown by molecular beam epitaxy , 1982 .

[49]  Y. Hamakawa,et al.  Electroreflectance study of InGaAsP quaternary alloys lattice matched to InP , 1981 .

[50]  A. Jean‐Louis,et al.  Growth of InSb1-xBix single crystals by Czochralski method , 1972 .

[51]  K. Oe,et al.  Molecular beam epitaxy of quaternary semiconductor alloy GaNAsBi , 2004, 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004..

[52]  K. Oe,et al.  Structural characterization of GaAs1−xBix alloy by rutherford backscattering spectrometry combined with the channeling technique , 2003 .