Recent advances in high-performance antimonide-based superlattice FPAs
暂无分享,去创建一个
M. Razeghi | A. Haddadi | G. Chen | S. Ramezani-Darvish | S. Abdollahi Pour | E. K. Huang | B.-M. Nguyen | M.-A. Hoang | M. Razeghi | G. Chen | B. Nguyen | E. Huang | A. Haddadi | S. Ramezani-Darvish | S. Abdollahi Pour | Minh-Anh Hoang
[1] Jeffrey H. Warner,et al. Graded band gap for dark-current suppression in long-wave infrared W-structured type-II superlattice photodiodes , 2006 .
[2] Manijeh Razeghi,et al. Demonstration of high performance long wavelength infrared type II InAs/GaSb superlattice photodiode grown on GaAs substrate , 2009 .
[3] P.-Y. Delaunay,et al. Background Limited Performance of Long Wavelength Infrared Focal Plane Arrays Fabricated From M-Structure InAs–GaSb Superlattices , 2009, IEEE Journal of Quantum Electronics.
[4] J. Curless,et al. Development of integrated heterostructures on silicon by MBE , 2002, International Conference on Molecular Bean Epitaxy.
[5] Manijeh Razeghi,et al. High performance long wavelength infrared mega-pixel focal plane array based on type-II superlattices , 2010 .
[6] Hooman Mohseni,et al. Interface-induced suppression of the Auger recombination in type-II InAs/GaSb superlattices , 1998 .
[7] D. Ting,et al. A high-performance long wavelength superlattice complementary barrier infrared detector , 2009 .
[8] Guanxi Chen,et al. Growth and Characterization of Long-Wavelength Infrared Type-II Superlattice Photodiodes on a 3-in GaSb Wafer , 2011, IEEE Journal of Quantum Electronics.
[9] Manijeh Razeghi,et al. Photovoltaic MWIR Type-II Superlattice Focal Plane Array on GaAs Substrate , 2010, IEEE Journal of Quantum Electronics.
[10] Manijeh Razeghi,et al. Background limited long wavelength infrared type-II InAs/GaSb superlattice photodiodes operating at 110 K , 2008 .
[11] Meimei Z. Tidrow,et al. Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate , 2009 .
[12] M. Razeghi,et al. Band edge tunability of M-structure for heterojunction design in Sb based type II superlattice photodiodes , 2008 .
[13] Zhichuan Niu,et al. Growth of GaSb layers on GaAs (0 0 1) substrate by molecular beam epitaxy , 2007 .
[14] M. Razeghi,et al. Uncooled operation of type-II InAs∕GaSb superlattice photodiodes in the midwavelength infrared range , 2005 .
[15] Yajun Wei,et al. Modeling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering , 2004 .
[16] Manijeh Razeghi,et al. High operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlattices , 2011 .
[17] Hooman Mohseni,et al. High carrier lifetime InSb grown on GaAs substrates , 1997 .
[18] Yajun Wei,et al. Very high quantum efficiency in type-II InAs/GaSb superlattice photodiode with cutoff of 12 μm , 2007 .