Direct molecular‐beam epitaxial growth of ZnTe(100) and CdZnTe(100)/ZnTe(100) on Si(100) substrates

Epitaxial structures of ZnTe(100) and CdZnTe(100)/ZnTe(100) have been deposited by molecular‐beam epitaxy onto Si(100) substrates misoriented from 0° to 8° towards the [011] direction. The films were characterized with x‐ray diffraction, photoluminescence spectroscopy, optical microscopy, and stylus profilometry. Single‐crystal CdZnTe(100) films comparable in structural quality to those obtained with growth on GaAs/Si composite substrates have been demonstrated on both 4° and 8° misoriented Si with the use of ZnTe buffer layers. X‐ray rocking curves with FWHM less than 300 arcsec for ZnTe (400) and less than 160 arcsec for CdZnTe(400) have been obtained for as‐grown films. Specular surface morphologies, superior to those obtained on GaAs/Si composite substrates, are also observed.

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