MOCVD growth of InAsN for infrared applications
暂无分享,去创建一个
Yoshiki Naoi | Shiro Sakai | S. Sakai | Y. Naoi | Hiroyuki Naoi | H. Naoi
[1] C. T. Foxon,et al. Auger investigation of group III nitride films grown by molecular beam epitaxy , 1995 .
[2] K. Cheng,et al. Luminescence quenching and the formation of the GaP1−xNx alloy in GaP with increasing nitrogen content , 1992 .
[3] M. Weyers,et al. Growth of GaAsN alloys by low‐pressure metalorganic chemical vapor deposition using plasma‐cracked NH3 , 1993 .